An improvement on locating defects precisely in power MOSFET

Abstract

As the process of device is scaling down continually. Engineers are trying their best to challenge the limitations of physics in IC industry. However, power IC like power MOSFET and Insulated Gate Bipolar Transistor (IGBT) still have a high requirement despite device scale — downs. Here, we want to highlight a method to improve defect location in IGSS (Gate — Source leakage) failure, through this method, we can reduce the FIB process time and increase the rate of success.

Topics

26 Figures and Tables

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